Inventory:1851

Technical Details

  • Package / Case Module
  • Mounting Type Chassis Mount
  • Configuration 2 N-Channel (Half Bridge)
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology Silicon Carbide (SiC)
  • Power - Max 850W
  • Drain to Source Voltage (Vdss) 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C 450A
  • Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 800V
  • Rds On (Max) @ Id, Vgs 3.7mOhm @ 450A, 15V
  • Gate Charge (Qg) (Max) @ Vgs 1330nC @ 15V
  • Vgs(th) (Max) @ Id 3.6V @ 132mA
  • Supplier Device Package Module

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