Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.7W (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 7A (Ta), 5.7A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V, 1100pF @ 15V
• Rds On (Max) @ Id, Vgs 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
• Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V, 33nC @ 10V
• Vgs(th) (Max) @ Id 2.3V @ 250µA, 2.2V @ 250µA
• Supplier Device Package 8-SOIC