Technical Details

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 300mV @ 2mA, 40mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 5V
• Supplier Device Package 3-SPA
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 300 mW
• Frequency - Transition 250 MHz
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 4.7 kOhms