- Product Model BSM600D12P3G001
- Brand ROHM Semiconductor
- RoHS Yes
- Description SIC 2N-CH 1200V 600A MODULE
- Classification FET, MOSFET Arrays
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 2450W (Tc)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 600A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 31000pF @ 10V
- Vgs(th) (Max) @ Id 5.6V @ 182mA
- Supplier Device Package Module
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