- Product Model PDTA113EMB,315
- Brand NXP Semiconductors
- RoHS No
- Description TRANS PREBIAS PNP 50V 0.1A 3DFN
- Classification Single, Pre-Biased Bipolar Transistors
Inventory:141500
Technical Details
- Package / Case SC-101, SOT-883
- Mounting Type Surface Mount
- Transistor Type PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic 150mV @ 1.5mA, 30mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 40mA, 5V
- Supplier Device Package DFN1006B-3
- Current - Collector (Ic) (Max) 100 mA
- Voltage - Collector Emitter Breakdown (Max) 50 V
- Power - Max 250 mW
- Frequency - Transition 180 MHz
- Resistor - Base (R1) 1 kOhms
- Resistor - Emitter Base (R2) 1 kOhms