- Product Model SSM6N813R,LXHF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET 2N-CH 100V 3.5A 6TSOPF
- Classification FET, MOSFET Arrays
-
PDF
Technical Details
- Package / Case 6-SMD, Flat Leads
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- Power - Max 1.5W (Ta)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 242pF @ 15V
- Rds On (Max) @ Id, Vgs 112mOhm @ 3.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
- FET Feature Logic Level Gate, 4.5V Drive
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Supplier Device Package 6-TSOP-F
- Grade Automotive
- Qualification AEC-Q101
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