Technical Details

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 27A (Ta)
• Rds On (Max) @ Id, Vgs 4.3mOhm @ 13.5A, 8V
• Power Dissipation (Max) 20W (Ta)
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Supplier Device Package 8-HWSON (3.3x3.3)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 3610 pF @ 10 V