Technical Details

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• FET Type P-Channel
• Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V (VGS)
• Voltage - Breakdown (V(BR)GSS) 30 V
• Supplier Device Package TO-92-3
• Drain to Source Voltage (Vdss) 30 V
• Power - Max 400 mW
• Resistance - RDS(On) 85 Ohms
• Voltage - Cutoff (VGS off) @ Id 5 V @ 10 nA
• Current - Drain (Idss) @ Vds (Vgs=0) 20 mA @ 15 V