Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.25W
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 3.6A, 2.6A
• Input Capacitance (Ciss) (Max) @ Vds 1063pF @ 30V, 1021pF @ 30V
• Rds On (Max) @ Id, Vgs 55mOhm @ 4.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1V @ 250µA (Min)
• Supplier Device Package 8-SO