- Product Model SSM6K819R,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description N-CH MOSFET, 100 V, 10 A, 0.0258
- Classification Single FETs, MOSFETs
Inventory:10653
Technical Details
- Package / Case 6-SMD, Flat Leads
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 25.8mOhm @ 4A, 10V
- Power Dissipation (Max) 1.5W (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Supplier Device Package 6-TSOP-F
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 15 V
- Qualification AEC-Q101