- Product Model SSM6J825R,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description P-CH MOSFET -30V, -20/+10V, -4A
- Classification Single FETs, MOSFETs
-
PDF
Inventory:7447
Technical Details
- Package / Case 6-SMD, Flat Leads
- Mounting Type Surface Mount
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Rds On (Max) @ Id, Vgs 45mOhm @ 4A, 10V
- Power Dissipation (Max) 1.5W (Ta)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package 6-TSOP-F
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Vgs (Max) +10V, -20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 492 pF @ 10 V