- Product Model GT30J65MRB,S1E
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description 650V SILICON N-CHANNEL IGBT, TO-
- Classification Single IGBTs
Inventory:1579
Technical Details
- Package / Case TO-3P-3, SC-65-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 200 ns
- Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
- Supplier Device Package TO-3P(N)
- Td (on/off) @ 25°C 75ns/400ns
- Switching Energy 1.4mJ (on), 220µJ (off)
- Test Condition 400V, 15A, 56Ohm, 15V
- Gate Charge 70 nC
- Current - Collector (Ic) (Max) 60 A
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Power - Max 200 W