Technical Details

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature 175°C
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 100A (Tc)
• Rds On (Max) @ Id, Vgs 21mOhm @ 50A, 18V
• Power Dissipation (Max) 431W (Tc)
• Vgs(th) (Max) @ Id 5V @ 11.7mA
• Supplier Device Package TO-247-4L(X)
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Vgs (Max) +25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 158 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 800 V