- Product Model XP65SL190DI
- Brand YAGEO XSEMI
- RoHS Yes
- Description MOSFET N-CH 650V 20A TO220CFM
- Classification Single FETs, MOSFETs
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Inventory:2495
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 20A (Tc)
- Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 10V
- Power Dissipation (Max) 1.92W (Ta), 34.7W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-220CFM
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 92.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3312 pF @ 100 V