Technical Details

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 850mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 3.8A, 2.5A
• Input Capacitance (Ciss) (Max) @ Vds 422pF @ 15V
• Rds On (Max) @ Id, Vgs 55mOhm @ 3.4A, 10V
• Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package TSOT-26