- Product Model BSM120D12P2C005
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET 2N-CH 1200V 120A MODULE
- Classification FET, MOSFET Arrays
Technical Details
- Package / Case Module
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 780W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
- Vgs(th) (Max) @ Id 2.7V @ 22mA
- Supplier Device Package Module
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