- Product Model EPC2106
- Brand EPC
- RoHS Yes
- Description GANFET 2N-CH 100V 1.7A DIE
- Classification FET, MOSFET Arrays
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Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 1.7A
- Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
- Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
- Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
- Vgs(th) (Max) @ Id 2.5V @ 600µA
- Supplier Device Package Die
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