Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Dual), Schottky
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 2140W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 337A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 1000V
• Rds On (Max) @ Id, Vgs 11mOhm @ 180A, 20V
• Gate Charge (Qg) (Max) @ Vgs 1224nC @ 20V
• Vgs(th) (Max) @ Id 3V @ 9mA
• Supplier Device Package Module