Technical Details

• Package / Case 9-VFBGA
• Mounting Type Surface Mount
• Configuration 3 N-Channel (Half Bridge + Synchronous Bootstrap)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA
• Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V, 7pF @ 50V
• Rds On (Max) @ Id, Vgs 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
• Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V
• Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA
• Supplier Device Package 9-BGA (1.35x1.35)