Inventory:1500

Technical Details

  • Transistor Type NPN - Pre-Biased
  • Vce Saturation (Max) @ Ib, Ic 200mV @ 250µ, 5mA
  • Current - Collector Cutoff (Max) 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max) 100 mA
  • Voltage - Collector Emitter Breakdown (Max) 50 V
  • Power - Max 200 mW
  • Resistor - Base (R1) 22 kOhms
  • Resistor - Emitter Base (R2) 22 kOhms
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