- Product Model RF4C100BCTCR
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET P-CH 20V 10A HUML2020L8
- Categories Одиночные полевые транзисторы, МОП-транзисторы
- In Stock 4334
Technical Details
- Package / Case 8-PowerUDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 15.6mOhm @ 10A, 4.5V
- Power Dissipation (Max) 2W (Ta)
- Vgs(th) (Max) @ Id 1.2V @ 1mA
- Supplier Device Package HUML2020L8
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


