- Product Model RS1E321GNTB1
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET N-CH 30V 32A/80A 8HSOP
- Categories Одиночные полевые транзисторы, МОП-транзисторы
- In Stock 6300
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 32A (Ta), 80A (Tc)
- Rds On (Max) @ Id, Vgs 2.1mOhm @ 32A, 10V
- Power Dissipation (Max) 3W (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-HSOP
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 42.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


