- Product Model RND030N20TL
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET N-CH 200V 3A CPT3
- Categories Одиночные полевые транзисторы, МОП-транзисторы
- In Stock 1500
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Rds On (Max) @ Id, Vgs 870mOhm @ 1.5A, 10V
- Power Dissipation (Max) 850mW (Ta), 20W (Tc)
- Vgs(th) (Max) @ Id 5.2V @ 1mA
- Supplier Device Package CPT3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


