• In Stock 20900

Technical Details

  • Package / Case TO-261-4, TO-261AA
  • Mounting Type Surface Mount
  • Operating Temperature -65°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
  • Rds On (Max) @ Id, Vgs 160mOhm @ 3.4A, 10V
  • Power Dissipation (Max) 3W (Ta)
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Supplier Device Package SOT-223-4
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 60 V
  • Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds 214 pF @ 30 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


MOSFET N-CH 55V 5.5A SOT223

In Stock: 73936

SICFET N-CH 1200V 63A TO247-4L

In Stock: 1504

MOSFET N-CH 30V 1.6A SOT23-3

In Stock: 40439

MOSFET N-CH 60V 4A SOT-223-4

In Stock: 1500

60V N-CHANNEL ENHANCEMENT MODE M

In Stock: 7440

Top