Technical Details

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 20A
• Rds On (Max) @ Id, Vgs 120mOhm @ 10A, 5V
• FET Feature Logic Level Gate, 4V Drive
• Power Dissipation (Max) 105W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package TO-220
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) ±15V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 30 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status ROHS3 Compliant