- Product Model IMBF170R450M1XTMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SICFET N-CH 1700V 9.8A TO263-7
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 3025
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.8A (Tc)
- Rds On (Max) @ Id, Vgs 450mOhm @ 2A, 15V
- Power Dissipation (Max) 107W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 2.5mA
- Supplier Device Package PG-TO263-7-13
- Drive Voltage (Max Rds On, Min Rds On) 12V, 15V
- Vgs (Max) +20V, -10V
- Drain to Source Voltage (Vdss) 1700 V
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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