Technical Details

• Package / Case DirectFET™ Isometric ME
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 209A (Tc)
• Rds On (Max) @ Id, Vgs 1.25mOhm @ 123A, 10V
• Power Dissipation (Max) 104W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 150µA
• Supplier Device Package DirectFET™ Isometric ME
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 111 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 6904 pF @ 25 V
• ECCN EAR99
• HTSUS 8542.39.0001