- Product Model IAUC60N04S6L045HATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET 2N-CH 40V 60A 8TDSON
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 30948
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 52W (Tc)
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 60A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 1136pF @ 25V
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 30A, 10V
- Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2V @ 13µA
- Supplier Device Package PG-TDSON-8-57
- Grade Automotive
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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