- Product Model ISC015N04NM5ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description 40V 1.5M OPTIMOS MOSFET SUPERSO8
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 2019
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 33A (Ta), 206A (Tc)
- Rds On (Max) @ Id, Vgs 1.5mOhm @ 50A, 10V
- Power Dissipation (Max) 3W (Ta), 115W (Tc)
- Vgs(th) (Max) @ Id 3.4V @ 60µA
- Supplier Device Package PG-TDSON-8 FL
- Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 20 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


