- Product Model SH8KC6TB1
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET 2N-CH 60V 6.5A 8SOP
- Categories Массивы полевых транзисторов, МОП-транзисторов
- In Stock 21463
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 2W (Ta)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 460pF @ 30V
- Rds On (Max) @ Id, Vgs 32mOhm @ 6.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-SOP
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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