• In Stock 4385

Technical Details

  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type P-Channel
  • Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
  • Rds On (Max) @ Id, Vgs 59mOhm @ 2.1A, 10V
  • Power Dissipation (Max) 1.4W (Ta)
  • Vgs(th) (Max) @ Id 2V @ 250µA
  • Supplier Device Package SOT-23-3
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 30 V
  • Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 3 (168 Hours)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


RF TRANS NPN 45V 2.3GHZ 55BT

In Stock: 1500

P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8

In Stock: 12560

Magnehelic Gage Range .50-0-.50I

In Stock: 1501

MOSFET P-CH 20V 3A SOT-23

In Stock: 301500

MOSFET N-CH 20V 4.3A SOT-23

In Stock: 6604

MOSFET N-CH 20V 4.3A SOT-23

In Stock: 301500

MOSFET P-CH 30V 4.2A SOT-23

In Stock: 10697

MOSFET P-CH 30V 4.2A SOT-23

In Stock: 271500

P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6

In Stock: 17391

MOSFET P-CH ESD 20V 4A SOT-23

In Stock: 501500

Top