- Product Model G33N03D3
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET 2N-CH 30V 30A 8DFN
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 8779
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 13W (Tc)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 28A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V
- Rds On (Max) @ Id, Vgs 11mOhm @ 16A, 10V
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-DFN (3x3)
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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