- Product Model FF2MR12W3M1HB11BPSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC 4N-CH 1200V AG-EASY3B
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 1509
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 4 N-Channel (Full Bridge)
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 400A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 48400pF @ 800V
- Rds On (Max) @ Id, Vgs 2.27mOhm @ 400A, 18V
- Gate Charge (Qg) (Max) @ Vgs 1600nC @ 18V
- Vgs(th) (Max) @ Id 5.15V @ 224mA
- Supplier Device Package AG-EASY3B
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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