- Product Model GPI65030DFN
- Brand GaNPower
- RoHS No
- Description GANFET N-CH 650V 30A DFN8X8
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 1600
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A
- Vgs(th) (Max) @ Id 1.2V @ 3.5mA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7.5V, -12V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 241 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Vendor Undefined
- REACH Status Vendor Undefined
- RoHS Status Not applicable
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