- Product Model ISC010N06NM5ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description OPTIMOS5 60 V POWER MOSFET IN SU
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 5075
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 39A (Ta), 330A (Tc)
- Rds On (Max) @ Id, Vgs 1.05mOhm @ 50A, 10V
- Power Dissipation (Max) 3W (Ta), 214W (Tc)
- Vgs(th) (Max) @ Id 3.3V @ 147µA
- Supplier Device Package PG-TSON-8-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


