- Product Model FDS8858CZ
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N/P-CH 30V 8.6A 8SOIC
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 51603
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 900mW
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 8.6A, 7.3A
- Input Capacitance (Ciss) (Max) @ Vds 1205pF @ 15V
- Rds On (Max) @ Id, Vgs 17mOhm @ 8.6A, 10V
- Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package 8-SOIC
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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