- Product Model 2SB601-AZ
- Brand Renesas
- RoHS No
- Description 2SB601 - PNP SILICON EPITAXIAL T
- Categories Одиночные биполярные транзисторы
-
PDF
- In Stock 5953
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Transistor Type PNP - Darlington
- Operating Temperature 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A
- Current - Collector Cutoff (Max) 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V
- Supplier Device Package TO-220AB
- Current - Collector (Ic) (Max) 5 A
- Voltage - Collector Emitter Breakdown (Max) 100 V
- Power - Max 1.5 W
- ECCN EAR99
- HTSUS 8541.29.0095
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant


