- Product Model SI5908DC-T1-E3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET 2N-CH 20V 4.4A 1206-8
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 3848
Technical Details
- Package / Case 8-SMD, Flat Lead
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1.1W
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 4.4A
- Rds On (Max) @ Id, Vgs 40mOhm @ 4.4A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package 1206-8 ChipFET™
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
MOSFET 2N-CH 60V 0.305A SC89
In Stock: 275303
MOSFET N-CH 30V 17A 8SO
In Stock: 13380
MOSFET N/P-CH 30V 4A/3.7A 1206-8
In Stock: 15255
MOSFET 2N-CH 30V 4A 1206-8
In Stock: 2942
MOSFET 2P-CH 20V 4A 1206-8
In Stock: 11848
