- Product Model TPS1101DR
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET P-CH 15V 2.3A 8SOIC
- Categories Одиночные полевые транзисторы, МОП-транзисторы
- In Stock 1500
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
- Rds On (Max) @ Id, Vgs 90mOhm @ 2.5A, 10V
- Power Dissipation (Max) 791mW (Ta)
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Supplier Device Package 8-SOIC
- Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
- Vgs (Max) +2V, -15V
- Drain to Source Voltage (Vdss) 15 V
- Gate Charge (Qg) (Max) @ Vgs 11.25 nC @ 10 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


