- Product Model DF419MR20W3M1HFB11BPSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET 4N-CH 2000V 50A AG-EASY3B
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 1501
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 4 N-Channel
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 2000V (2kV)
- Current - Continuous Drain (Id) @ 25°C 50A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 7240pF @ 1.2kV
- Rds On (Max) @ Id, Vgs 26.5mOhm @ 60A, 18V
- Gate Charge (Qg) (Max) @ Vgs 234nC @ 18V
- Vgs(th) (Max) @ Id 5.15V @ 34mA
- Supplier Device Package AG-EASY3B
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


