- Product Model EPC7003AC
- Brand EPC Space
- RoHS No
- Description GAN FET HEMT 100V 5A COTS 4UB
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 1644
Technical Details
- Package / Case 4-SMD, No Lead
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Rds On (Max) @ Id, Vgs 42mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 1.4mA
- Supplier Device Package 4-SMD
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 168 pF @ 50 V
- HTSUS 0000.00.0000
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
Related Products
Linear IC's
In Stock: 1500
GAN FET HEMT100V30A COTS 4FSMD-B
In Stock: 1573
GAN FET HEMT200V18A COTS 4FSMD-B
In Stock: 1605
GAN FET HEMT 60V 1A COTS 4UB
In Stock: 1582
GAN FET HEMT 100V 74A COTS 4UD
In Stock: 1600
GAN FET HEMT 100V 90A COTS 5UB
In Stock: 1508
GAN FET HEMT 100V 90A 5UB
In Stock: 1522
GAN FET HEMT 40V 80A COTS 4UD
In Stock: 1600
GAN FET HEMT 40V 95A COTS 5UB
In Stock: 1595
GAN FET HEMT 200V 80A COTS 5UB
In Stock: 1500
