- Product Model FBG20N18BSH
- Brand EPC Space
- RoHS No
- Description GAN FET HEMT 200V 18A 4FSMD-B
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 1551
Technical Details
- Package / Case 4-SMD, No Lead
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 28mOhm @ 18A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 3mA
- Supplier Device Package 4-SMD
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 7 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V
- ECCN 9A515E1
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
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