- Product Model IGLR60R260D1XUMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description GAN HV
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 6463
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10.4A (Tc)
- Power Dissipation (Max) 52W (Tc)
- Vgs(th) (Max) @ Id 1.6V @ 690µA
- Supplier Device Package PG-TSON-8-7
- Vgs (Max) -10V
- Drain to Source Voltage (Vdss) 600 V
- Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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