- Product Model CGD65B200S2-T13
- Brand Cambridge GaN Devices
- RoHS Yes
- Description 650V GAN HEMT, 200MOHM, DFN5X6.
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 5855
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
- Rds On (Max) @ Id, Vgs 280mOhm @ 600mA, 12V
- FET Feature Current Sensing
- Vgs(th) (Max) @ Id 4.2V @ 2.75mA
- Supplier Device Package 8-DFN (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 9V, 20V
- Vgs (Max) +20V, -1V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 12 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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