Technical Details

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 370mW (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 500mA (Ta), 360mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 14.6pF @ 16V, 17pF @ 16V
• Rds On (Max) @ Id, Vgs 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 0.28nC @ 4.5V, 0.3nC @ 4.5V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package X2-DFN1010-6 (Type UXC)
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant