Technical Details

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 980mW (Ta), 2W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 17A (Ta), 15.3A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V, 1032pF @ 15V
• Rds On (Max) @ Id, Vgs 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
• Gate Charge (Qg) (Max) @ Vgs 22.7nC @ 10V, 16.3nC @ 10V
• Vgs(th) (Max) @ Id 1.9V @ 250µA
• Supplier Device Package PowerDI3333-8 (Type G)
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant