Technical Details

• Package / Case 30-PowerWFQFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 650V
• Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 28pF @ 400V
• Rds On (Max) @ Id, Vgs 472mOhm @ 500mA, 6V
• Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 6V
• Vgs(th) (Max) @ Id 2.5V @ 2.8mA
• Supplier Device Package 30-QFN (8x10)
• ECCN EAR99
• HTSUS 8542.39.0001
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant