- Product Model IRF5801TRPBF
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 200V 600MA MICRO6
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 10785
Technical Details
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
- Rds On (Max) @ Id, Vgs 2.2Ohm @ 360mA, 10V
- Power Dissipation (Max) 2W (Ta)
- Vgs(th) (Max) @ Id 5.5V @ 250µA
- Supplier Device Package Micro6™(TSOP-6)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 88 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


