Technical Details

• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 450mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 6A, 4.5A
• Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 10V
• Rds On (Max) @ Id, Vgs 26mOhm @ 3A, 10V
• Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2V @ 1mA
• Supplier Device Package 8-SOP (5.5x6.0)
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)