- Product Model CSD23201W10
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET P-CH 12V 2.2A 4DSBGA
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 1500
Technical Details
- Package / Case 4-UFBGA, DSBGA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
- Rds On (Max) @ Id, Vgs 82mOhm @ 500mA, 4.5V
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package 4-DSBGA (1x1)
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs (Max) -6V
- Drain to Source Voltage (Vdss) 12 V
- Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 6 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


